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ta8221ahq / alq 2004-09-28 1 toshiba bipolar linear integrated circuit silicon monolithic ta8221ahq,TA8221ALQ 30w btl 2ch audio power amplifier the thermal resistance j ? t of ta8221ahq, TA8221ALQ package designed for low thermal resistance, has a high efficiency of heat radiation. the temperature rise of chip can be reduced, and the influence from the degradation of the features due to the temperature rise at the high output can also be reduced. this stereo audio power ic, designed for car audio use, has two built ? in channels to reduce the characteristic difference between l and r channels. it also contains various kind of protection. features ? low thermal resistance : j ? t = 1.5c / w (infinite heat sink) ? high power : p out (1) = 30w (typ.) / channel (v cc = 14.4v, f = 1khz, thd = 10%, r l =2 ? ) p out (2) = 26w (typ.) / channel (v cc = 13.2v, f = 1khz, thd = 10%, r l = 2 ? ) p out (3) = 19w (typ.) / channel (v cc = 13.2v, f = 1khz, thd = 10%, r l = 4 ? ) ? low distortion ratio: thd = 0.04% (typ.) (v cc = 13.2v, f = 1khz, p out = 1w, r l = 4 ? , g v = 50db) ? low noise: v no = 0.30mv rms (typ.) (v cc = 13.2v, r l = 4 ? , g v 50db, r g = 0 ? , bw = 20hz~20khz) ? built ? in stand ? by function (with pin(4) set at low, power is turned off.): i sb = 100a (typ.) ? built ? in muting function (with pin(1) set at low, power is turned off.) ? built ? in various protection circuits protection circuits: thermal shut down, over voltage, out v cc short, out gnd short and out ? out short. ? operating supply voltage: v cc (opr) = 9~18v ta8221ahq TA8221ALQ weight hzip17 ? p ? 2.00 : 9.8g (typ.) hsip17 ? p ? 2.00 : 9.8g (typ.) free datasheet http://
ta8221ahq / alq 2004-09-28 2 block diagram ta8221ahq, TA8221ALQ (g v = 50db) cautions and application method (description is made only on the single channel.) 1. voltage gain adjustment this ic has the amplifier construction as shown fig.1. the pre ? amp (amp 1) is provided to the primary stage, and the input voltage is amplified by the flat amps, amp 3 and amp 4 of each channel through the phase amp (amp 2). since the input offset is prevented by pre ? amp when v cc is set to on, this circuit can remarkably reduce the pop noise. free datasheet http://
ta8221ahq / alq 2004-09-28 3 the total closed loop gain g v of this ic can be obtained by expression below when the closed loop voltage gain of amp 1 is g v1 . (db) r2 f r r2) f (r r1 og 20 v1 g + + + = l ..... (1) the closed loop voltage gain of power amp, amp 3 and amp 4 is fixed at g v3 P g v4 = 20db. therefore, the total closed circuit voltage gain g v is obtained through btl connection by the expression below. g v = g v1 + g v3 + 6 (db) ............... (2) for example, when rf = 0 ? , g v is obtained by the expressions (1) and (2) as shown below. g v P 24 + 20 + 6 = 50db the voltage gain is reduced when r f is increased. (fig.2) with the voltage gain reduced, since (1) the oscillation stability is reduced, and (2) the pop noise changes when v cc is set to on, refer to the items 3 and 4. 2. stand ? by sw function by means of controlling pin(4) (stand ? by terminal) to high and low, the power suply can be set to on and off. the threshold voltage of pin(4) is set at 2.1v (3v be .), and the power supply current is about 100a (typ.) at the stand ? by state. control voltage of pin(4): v (sb) stand ? by power v (sb) (v) on off 0~2 off on 3~v cc advantage of stand ? by sw (1) since v cc can directly be controlled to on / off by the microcomputer, the switching relay can be omitted. (2) since the control current is microscopic, the switching relay of small current capacity is satisfactory for switching. free datasheet http://
ta8221ahq / alq 2004-09-28 4 3. preventive measure against oscillation for preventing the oscillation, it is advisable to use c4, the condenser of polyester film having small characteristic fluctuation of the temperature and the frequency. the condenser (c6) between input and gnd is effective for preventng oscillation which is generated with a feedback signal from an output stage. the resistance r to be series applied to c4 is effective for phase correction of high frequency, and improves the oscillation allowance. (1) voltage gain to be used (g v setting) (2) capacity value of condenser (3) kind of condenser (4) layout of printed board in case of its use with the voltage gain g v reduced or with the feedback amount increased, care must be taken because the phase ? inversion is caused by the high frequency resulting in making the oscillation liable generated. 4. adjustment of output offset (when the power supply turn on) as this ic is contructed with dc circuit on the primary stage, it is necessary to lower a input offset or output offset by agreement with the each leading edge time constant of the input voltage in the primary stage and nf terminal voltage. concretely, monitor the output dc voltage and vary the capacity value in input condenser and nf condenser (see fig.4) (reference) in case of setting the condition (g v = 40db) with r f = 470 ? . free datasheet http://
ta8221ahq / alq 2004-09-28 5 5. muting function through setting pin(1) (mute terminal) at about 1v or less, muting becomes possible. the interval circuit of ic is shown in fig.5. when pin(1) is set to low, q1 and q2 are turned to on, the charge of the ripple condenser is discharged and the bias is cut. the mute amount of 60db or over can be obtained. since this muting function rapidly discharge the charge of the ripple filter capacitor of pin(8), the pop noise is generated by the dc fluctuation of the bias section. therefore, this muting function is not appropriate to the audio muting but it is effective in muting at v cc on. 6. rapid ripple discharging circuit at the time of v cc off this circuit is effective in such a mode where the v cc and the stand ? by terminals become high / low simultaneously ; for instance, for a pop noise produced when the power is turned on / off repeatedly by operating the ignition key. if v cc is off, v cc P 7v is detected internally on ic and (1) the power stage bias circuit is cut, and (2) pin(8) : ripple capacitor is rapidly discharged by turning q3 on and then q1 and q2 on. (precaution 1) when the stand ? by terminal was put to the low level after the ripple rapid discharging circuit was operated (v cc P 7v) at the time when v cc was turned off, a pop noise may be generated. therefore, v cc which makes the stand ? by terminal low shall be set at 8v or above so that (1) the stand ? by terminal is put at the low level and (2) the ripple rapid discharging circuit is turned on when v cc is turned off (in order of (1) and (2)). an example of application is shown in (fig.7). free datasheet http://
ta8221ahq / alq 2004-09-28 6 (precaution 2) if the falling time constant of the v cc line is large (the fall is gentle), the pop noise may become worse. in this case, it is possible to prevent the pop noise from beoming worse by reducing the capacity of "ripple rapid discharging circuit at the time of v cc off" accordign to the following steps : (a) short pin(1) (mute terminal) and pin(8) (ripple terminal). (b) increase the capacity of ripple capacitor of pin(8). however, it shall be kept in mind that the time for turning the power on becomes longer as the result of step (b). 7. external parts list and description influence sym ? bol recom ? mended value feature smaller than recommended value larger than recommended value remarks c1 4.7f dc blocking related to pop noise at v cc on. related to gain. refer to item 4. related to pop noise at v cc on. c2 47f feedback condenser determination of low cut ? off frequency. c2 = f r l f 2 1 ? ? c3 220f ripple reduction time constant is small at v cc on or off. time constant is large at v cc on or off. c4 0.12f oscillation prevention made liable to oscillate. oscillation allowance refer to item 3. c5 1000f ripple filter for filtering power supply hum and ripple. large at using ac rectified power supply. small at using dc power supply. c6 1000 p f oscillation prevention oscillation allowance improved. noise reduction refer to item 3. free datasheet http://
ta8221ahq / alq 2004-09-28 7 maximum ratings (ta = 25c) characteristic symbol rating unit peak supply voltage (0.2s) v cc (surge) 50 v dc supply voltage v cc (dc) 25 v operating supply voltage v cc (opr) 18 v output current (peak) i o (peak) 9 a power dissipation p d 50 w operating temperature t opr ? 30~85 c storage temperature t stg ? 55~150 c electrical characteristics (unless otherwise specified, v cc = 13.2v, r l = 4 ? , f = 1khz, ta = 25c) characteristic symbol test cir ? cuit test condition min. typ. max. unit quiescent supply current i ccq D v in = 0 D 120 250 ma p out (1) D v cc = 14.4v, r l = 2 ? , thd = 10% D 30 D p out (2) D r l = 2 ? , thd = 10% 17 26 D output power p out (3) D thd = 10% 16 19 D w total harmonic distortion thd D p out = 1w D 0.04 0.4 % voltage gain g v D D 48 50 52 db voltage gain ratio ? g v D D ? 1.0 0 1.0 db output noise voltage v no D r g = 0 ? , bw = 20hz~20khz D 0.3 0.7 mv rms ripple rejection ratio r.r. D fripple = 100hz, r g = 600 ? 40 54 D db input resistance r in D D D 30 D k ? output offset voltage v offset D v in = 0 ? 100 0 100 mv current at stand ? by state i sb D D D 100 150 a cross talk c.t. D r g = 600 ? , v out = 0.775v rms (0dbm) D 60 D db pin(4) control voltage v sb D stand ? by off (power on) 2.5 D v cc v pin(1) control voltage v (mute) D mute on (power off) D 1.0 2.0 v free datasheet http://
ta8221ahq / alq 2004-09-28 8 test circuit ta8221ahq, TA8221ALQ (g v = 50db) free datasheet http://
ta8221ahq / alq 2004-09-28 9 free datasheet http://
ta8221ahq / alq 2004-09-28 10 free datasheet http://
ta8221ahq / alq 2004-09-28 11 free datasheet http://
ta8221ahq / alq 2004-09-28 12 package dimensions weight : 9.8g (typ.) free datasheet http://
ta8221ahq / alq 2004-09-28 13 package dimensions weight : 9.8g (typ.) free datasheet http://
ta8221ahq / alq 2004-09-28 14 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the products described in this document are subject to the foreign exchange and foreign trade laws. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. ? this product generates heat during normal operation. however, substandard performance or malfunction may cause the product and its peripherals to reach abnormally high temperatures. the product is often the final stage (the external output stage) of a circuit. substandard performance or malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the product. 030619ebf restrictions on product use about solderabilit y, following conditions were confirmed ? solderability (1) use of sn-63pb solder bath solder bath temperature = 230c dipping time = 5 seconds the number of times = once use of r-type flux (2) use of sn-3.0ag-0.5cu solder bath solder bath temperature = 245c dipping time = 5 seconds the number of times = once use of r-type flux free datasheet http://

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